The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Jun. 16, 2000
Richard Hsiao, San Jose, CA (US);
John I. Kim, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention includes a two-step etching process for notching the P pole of the write head element of a magnetic head. In a first step, the preferred embodiment utilizes a combination of C F and argon gases (designated as C F /Ar) as the etchant gas to preferentially etch portions of the alumna write gap layer. Thereafter, in the second step, argon is used as the etchant gas to preferentially etch the P pole material. The C F /Ar etchant gas preferably includes C F gas in a concentration range of from 50% to 90%, with a preferred concentration range being from 70% to 80%. The etching of the alumna write gap layer is preferably conducted with a first echant ion beam angle of from 5° to 30°, and a second etchant ion beam angle of from 65° to 85°.