The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Sep. 24, 2002
Takuya Komoda, Sanda, JP;
Yoshiyuki Takegawa, Nara, JP;
Koichi Aizawa, Neyagawa, JP;
Takashi Hatai, Neyagawa, JP;
Tsutomu Ichihara, Hirakata, JP;
Yoshiaki Honda, Kyoto, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Toru Baba, Shijonawate, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
A lower electrode ( ) and surface electrode ( ) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate ( ) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer ( ) is formed on the lower electrode ( ). An electron transit layer ( ) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer ( ). The electron transit layer ( ) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode ( ) and the surface electrode ( ) such that the surface electrode ( ) has a higher potential, electrons are injected from the lower electrode ( ) toward the surface electrode ( ), and emitted through the surface electrode ( ) through the electron transit layer ( ).