The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2004

Filed:

Dec. 03, 2001
Applicant:
Inventors:

Toshio Hata, Nara, JP;

Mayuko Fudeta, Nara, JP;

Daigaku Kimura, Tenri, JP;

Assignee:

Sharp Kabushiki Kaisha, Abeno-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ;
Abstract

In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.


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