The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Aug. 22, 2000
Applicant:
Inventors:
Chuan-Cheng Tu, Tainan, TW;
Jen-Chau Wu, Hsinchu, TW;
Shiu-Mu Tang, Kaohsiung, TW;
Pao-I Huang, Chiai, TW;
Assignee:
United Epitaxy Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9205 ;
U.S. Cl.
CPC ...
H01L 2/9205 ;
Abstract
The present invention provides a quantum well device and a method of forming the same. The quantum well device comprises alternately stacked n layers of quantum well layers and n layers of barrier layers, wherein the quantum well layers and barrier layers are alternatively doped with dopant, and n is a positive integer. The dopant of a predetermined concentration is applied to control the breakdown voltage and output intensity of the quantum well device and to consequently avoid artificial and mechanical ESD failure.