The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Oct. 26, 2001
Hailing Tu, Beijing, CN;
Yonghong Wang, Beijing, CN;
Jiayu Qian, Beijing, CN;
Ping Song, Beijing, CN;
Fengyi Zhang, Beijing, CN;
General Research Institute for Nonferrous Metals, Beijing, CN;
Abstract
The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.