The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2004

Filed:

Jun. 14, 2002
Applicant:
Inventors:

Katsuya Yamagiwa, Aichi, JP;

Jun Otsuka, Aichi, JP;

Takashi Kasashima, Aichi, JP;

Manabu Sato, Aichi, JP;

Kazuhisa Itakura, Aichi, JP;

Takashi Oba, Aichi, JP;

Masahiko Matsumiya, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 3/5495 ;
U.S. Cl.
CPC ...
C04B 3/5495 ;
Abstract

A dielectric composition is based on a BaO—MgO—Nb O system material (BMN system material) having a dielectric constant, &egr;, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (&tgr; ) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.


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