The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Mar. 21, 2002
Applicant:
Inventor:
Ryouta Matsubara, Kumamoto, JP;
Assignee:
Advanced Display Inc., , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A semiconductor layer protruding beside a source line is removed in order to increase aperture ratio, decrease resistance of the source line and prevent source-common capacitance from increasing. When a part of a passivation film is removed to form a contact hole, the passivation film on the source line, the passivation film beside the source line and a gate insulating layer beside the source line are simultaneously removed. A portion protruding beside the source line is removed from thus exposed semiconductor layer using a resist pattern for removing the part of the passivation film and/or the source line as a mask.