The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Dec. 13, 2001
Applicant:
Inventors:
Takeshi Ito, Okazaki, JP;
Kazushi Asami, Okazaki, JP;
Tsuyoshi Fukada, Aichi-gun, JP;
Hirofumi Higuchi, Okazaki, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01P 1/500 ; H01L 2/100 ;
U.S. Cl.
CPC ...
G01P 1/500 ; H01L 2/100 ;
Abstract
A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.