The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Feb. 22, 2002
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ;
U.S. Cl.
CPC ...
G06F 1/750 ;
Abstract
A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to the character shapes extracted from a semiconductor device pattern, the method comprises arranging the character apertures in the aperture mask, each of the character apertures having a shape corresponding to character shapes extracted from a standard cell pattern used for designing a semiconductor device, and varying the shape of the charged particle beam according to the outer shape of each of the character apertures, thereby applying the shaped charged particle beam to the character apertures.