The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Apr. 01, 2002
Xiaobo Zhang, Arcadia, CA (US);
Lumei Optoelectronics Corporation, El Monte, CA (US);
Abstract
A heavily doped semiconductor layer is formed over the barrel of a vertical cavity surface emitting laser (VCSEL), providing current conduction and current spreading across and into the aperture of a laser barrel, while eliminating the need for a light-obstructing conductive electrical contact overhang. The VCSEL comprises a substrate, a first distributed Bragg reflector (DBR), an active region, a second DBR having a non-conductive ion implantation region and a laser barrel region with a first diameter, the heavily doped semiconductor layer, and a conductive electrical contact. The conductive electrical contact defines an opening with a second diameter that is greater than the first diameter.