The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Jul. 16, 2002
Hideki Asano, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
In a semiconductor laser device, a current confinement structure is realized by p-type and n-type layers formed above an active layer, where the p-type and n-type layers include a current stopping layer which has an opening for allowing current injection into only a predetermined stripe region of the active layer. In addition, a semiconductor layer is formed above the current confinement structure, and a pair of trenches are formed on both sides of the opening along the predetermined stripe region so as to extend from the semiconductor layer through the current stopping layer to at least the active layer. Further, an insulation film is formed on the semiconductor layer except that an area of the semiconductor layer located right above the predetermined stripe region is not covered by the insulation film, and an electrode is formed on the area of the semiconductor layer.