The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Aug. 17, 2001
Masatoshi Arasawa, Odawara, JP;
Haruko Tanaka, Nakai, JP;
Makoto Morijiri, Ninomiya, JP;
Koichi Nishioka, Hiratsuka, JP;
Shuichi Kojima, Hiratsuka, JP;
Masayasu Kagawa, Hiratsuka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.