The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Jan. 14, 2003
Keith E. Fogel, Mohegan Lake, NY (US);
Maurice H. Norcott, San Jose, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions are implanted into a surface of a Si-containing substrate that includes a sufficient Si thickness to allow for subsequent formation of a buried oxide region in the Si-containing substrate which has a greater content of thermally grown oxide as compared to oxide formed by the implanted oxygen ions followed by an annealing step. The sufficient Si thickness can be obtained by (i) forming a Si layer on the surface of the implanted substrate prior to annealing; (ii) conducting a high-energy, high-dose oxygen implant to ensure that the oxygen ions are implanted a sufficient distance from the surface of the Si-containing substrate; or (iii) conducting a high-energy, low-dose oxygen implant so that less implanted oxide is present in the Si-containing substrate.