The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Jun. 23, 2000
Tomoyuki Furuhata, Sakata, JP;
Atsushi Yamazaki, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Embodiments include a semiconductor device having a non-volatile memory transistor, the semiconductor device including a plurality of field effect transistors operated at a plurality of different voltage levels. The semiconductor device has a memory region , and first second and third transistor regions and respectively including field effect transistors that operate at different voltage levels. The memory region includes a split-gate non-volatile memory transistor . The first transistor region includes a first voltage-type transistor that operates at a first voltage level. The second transistor region includes a second voltage-type transistor that operates at a to second voltage level. The third transistor region includes a third voltage-type transistor that operates at a third voltage level. The second voltage-type transistor has a gate insulation layer that is formed from at least two insulation layers and . The insulation layer is formed in the same step in which a gate insulation layer of the first voltage-type transistor is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile