The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Jan. 07, 2003
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
In the method of producing the - group compound semiconductor carrying out the lateral direction selective growth of the desired GaN type - group compound-semiconductor layer on this c-plane by the stripe mask formed on the c-plane of the underlying crystal containing a GaN type - group compound semiconductor, a stripe mask is formed on the underlying crystal such that the direction of the stripe is rotated 0.095° or more and less than 9.6° from <1-100> direction, and with using this stripe mask, the lateral direction selective growth of the GaN type - group compound-semiconductor layer is carried out, and a high quality - group compound-semiconductor layer can be formed on the underlying crystal.