The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Jan. 22, 2002
Josef Böck, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
During the production of integrated semiconductor structures, it is often necessary to differently dope immediately adjacent regions. A method is provided for producing two adjacent regions of a predetermined area in an integrated semiconductor, whereby a first region of the two adjacent regions includes a doping with a lower target concentration than a second region. The predetermined area of a semiconductor blank is doped with a dopant until a concentration of the dopant is obtained that is at least as high as the target concentration of the second region. A protective layer is applied to the second region, and the dopant is out-diffused from the first region until a concentration of dopant is obtained that corresponds to the target concentration of the first region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile