The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Apr. 11, 2002
Sony Corporation, Tokyo, JP;
Abstract
A giant magneto-resistive effect element ( ) comprises a lamination layer film ( ) including a ferromagnetic film and wherein a nonmagnetic film and an antiferromagnetic film, the ferromagnetic film includes a magnetization free layer ( ) and a magnetization fixed layer, a current is restricted by an upper electrode and a lower electrode in such a manner that the current may flow in the direction perpendicular to the film plane of the lamination layer film ( ), the lamination layer film ( ) is laminated including a high-resistance layer ( ), a hard magnetic film ( ) made of a conductive hard magnetic material and an insulating layer ( ) are directly bonded to respective outsides of this lamination layer film ( ) along its width direction and this hard magnetic film ( ) is shifted from the high-resistance layer ( ) and bonded near the magnetization free layer ( ). A magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor include the giant magneto-resistive effect element ( ). The giant magneto-resistive effect element can obtain a high output, a high resistance and is able to cope with high recording density. Also, the magneto-resistive effect head, the thin-film magnetic memory and the thin-film magnetic sensor may include this giant magneto-resistive effect element.