The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Dec. 04, 2001
Sharmin Sadoughi, Cupertino, CA (US);
Mira Ben-Tzur, Sunnyvale, CA (US);
Michal E. Fastow, Cupertino, CA (US);
Saurabh Dutta Chowdhury, Belmont, CA (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A method and a system are provided for forming a borderless contact structure. In particular, a method is provided which includes using an inorganic anti-reflective coating layer as an etch stop to form a borderless contact structure. In some embodiments, the method may include patterning an interconnect line above an inorganic layer with anti-reflective properties and depositing an upper interlevel dielectric layer above the interconnect line. A trench may then be etched within the upper interlevel dielectric layer such that a borderless contact structure may be formed in contact with said interconnect line. Consequently, a semiconductor topography is provided, in such an embodiment, which includes an inorganic anti-reflective coating layer arranged below an interconnect line and a contact structure arranged upon the interconnect line. In some embodiments, a width of the contact structure may be greater than a width of the interconnect line.