The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2004

Filed:

Apr. 08, 2002
Applicant:
Inventors:

Toshihiko Omi, Chiba, JP;

Kazutoshi Ishii, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A semiconductor device is provided in which each of contacts between a source and a drain of a MOS transistor and a metallic wiring is either a contact having an arbitrary one side longer than the other side, or source contacts and well contacts are made batting contacts each having an arbitrary one side of a diffusion region having the same polarity as that of a well shorter than the other side. Thus, the contact shape is longitudinal in a transistor width direction, which makes it possible that a large current is caused to flow with a small interval of gates thereof.


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