The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
May. 22, 2003
Noriyuki Kodama, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
An N well is formed in a surface of a P substrate and a P well is formed in such a way as to surround the N well. Then, a trigger tap (P diffusion region) is formed in the surface of the P well and two cathodes (N diffusion regions) are formed in such a way as to hold the trigger tap. Then, an anode (P diffusion region) is formed in the surface of the N well in a position facing the trigger tap and the cathode, and an N well pick-up diffusion (N diffusion region) is formed in such a way as to surround that side edge of the anode which does not face the cathode. Accordingly, the resistance between the end portion of the anode and the N well pick-up diffusion (N diffusion region) becomes lower than the resistance between the center portion of the anode and the N well pick-up diffusion.