The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Jun. 27, 2000
Heinrich Wolf, Unterschleissheim, DE;
Wolfgang Wilkening, Pfullingen, DE;
Abstract
An ESD protection device for an integrated circuit, which is integrated in a semiconductor substrate of the integrated circuit, has a heavily doped p-region provided with a first connection electrode, a heavily doped n-region provided with a second connection electrode, a lightly doped p-region bordering on the heavily doped p-region, and a lightly doped n-region bordering on the heavily doped n-region and the lightly doped p-region in such a way that the lightly doped regions are arranged at least between the heavily doped regions. The distance which exists between the lightly doped p-region and the heavily doped n-region and which is determined by the lightly doped n-region is dimensioned in such a way that the depletion zone in the lightly doped n-region, which becomes larger as the blocking voltage applied to the connection electrodes increases, reaches the heavily doped n-region before the breakthrough voltage between the lightly doped n-region and the lightly doped p-region has been reached.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile