The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Aug. 05, 2002
Applicant:
Inventor:
Waclaw C. Koscielniak, Santa Clara, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A double diffused MOS (DMOS) transistor structure is provided that uses a trench trough suitable for high-density integration with mixed signal analog and digital circuit applications. The DMOS device can be added to any advanced CMOS process using shallow trench isolation by adding additional process steps for trench trough formation, a trench implant and a P-body implant. The trench trough and trench implant provide a novel method of forming a drain extension for a high-voltage DMOS device.