The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Jul. 30, 2002
Yoshimi Shioya, Tokyo, JP;
Yuhko Nishimoto, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Shoji Ohgawara, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Other;
Abstract
A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF gas, a C F gas and a NF gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (C H ), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (C H ), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.