The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Mar. 04, 2003
Zhi-Yuan Cheng, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Dimitri A. Antoniadis, Newton, MA (US);
Judy L. Hoyt, Belmont, MA (US);
Masachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si Ge (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si Ge layer, a thin strained Si Ge layer and another relaxed Si Ge layer. Hydrogen ions are then introduced into the strained Si Ge layer. The relaxed Si Ge layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si Ge layer remains on the second substrate. In another exemplary embodiment, a graded Si Ge is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.