The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Jul. 03, 2002
Xiaochun Linda Chen, Hopewell Junction, NY (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A lithography method for use in the manufacture of semiconductor devices, which prevents lithographic exposure of a periphery region or edge region of a semiconductor wafer and which prevents the formation of black silicon related particle contamination in a patterned region on the periphery region as a result of, e.g., a deep trench manufacturing process. A quencher solution is applied at peripheral areas of the wafer on which a photoresist layer is formed. The quencher solution neutralizes acid generated in the photoresist when the photoresist is exposed to radiation, thereby preventing the photoresist on the peripheral region of the wafer to dissolve during a subsequent developing process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile