The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Dec. 04, 2000
Seiji Muranaka, Tokyo, JP;
Itaru Kanno, Tokyo, JP;
Mami Shirota, Wakayama, JP;
Junji Kondo, Wakayama, JP;
Kao Corporation, Tokyo, JP;
Abstract
Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO are exposed on the surface of a wafer after etching of a metal gate.