The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Feb. 28, 2002
Ying-Lan Chang, Cupertino, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Russell D. Dupuis, Austin, TX (US);
Min Soo Noh, Austin, TX (US);
Jae Hyun Ryou, Austin, TX (US);
Michael R. T. Tan, Menlo Park, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises In Ga AsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile