The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
May. 09, 2000
Kiyofumi Chikuma, Tsurugashima, JP;
Hiroyuki Ota, Tsurugashima, JP;
Toshiyuki Tanaka, Tsurugashima, JP;
Pioneer Corporation, Tokyo, JP;
Abstract
A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (Al Ga ) In N (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Al Ga ) In N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.