The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
May. 05, 2003
Applicant:
Inventors:
Hiroko Kubo, Kyoto, JP;
Kenji Yoneda, Kyoto, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7148 ; H01L 2/906 ; H01L 2/908 ; H01L 2/904 ; H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 2/7148 ; H01L 2/906 ; H01L 2/908 ; H01L 2/904 ; H01L 3/1072 ;
Abstract
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.
Quick Actions:
Kubo, Hiroko. (2004). Semiconductor device and method for fabricating the same (U.S. Patent No. 6710382). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6710382
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile