The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2004

Filed:

Aug. 25, 2000
Applicant:
Inventors:

Masao Makiuchi, Kawasaki, JP;

Nami Yasuoka, Kawasaki, JP;

Haruhisa Soda, Kawasaki, JP;

Takuya Fujii, Nakakoma, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1109 ;
U.S. Cl.
CPC ...
H01L 3/1109 ;
Abstract

A photo sensor is formed in a partial area of the principal surface of a substrate. The photo sensor includes a light reception layer parallel to the principal surface, the light reception layer being made of semiconductor and generating carriers in response to received light. A light waveguide is formed in a partial area of the principal surface of the substrate, the light waveguide propagating light in a direction parallel to the principal surface and introducing light into the light reception layer. A semi-insulating semiconductor film covers side faces of the photo sensor. A pair of electrodes flows current into the light reception layer of the photo sensor in a thickness direction of the light reception layer. A semiconductor light reception device having a structure suitable for high-speed operation and easy to manufacture is provided.


Find Patent Forward Citations

Loading…