The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Sep. 06, 2002
Applicant:
Inventor:
Taiji Noda, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/122 ;
U.S. Cl.
CPC ...
H01L 2/122 ;
Abstract
As impurity ions for forming a channel, heavy ions are implanted multiple times at a dose such that no dislocation-loop defect layer is caused to be formed, and an annealing process is performed after each ion implantation process has been carried out, thereby forming a heavily doped channel layer having a steep retro-grade impurity profile.
Noda, Taiji. (2004). Method for fabricating semiconductor device (U.S. Patent No. 6709961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6709961
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile