The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jun. 21, 2002
James D. Werking, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A scribe seal ( ) and a method for manufacturing the scribe seal ( ) and a semiconductor component including the scribe seal ( ). A semiconductor substrate ( ) has a major surface ( ) and a crack arrest structure ( ) formed on the major surface ( ). A dielectric material ( ) is formed on a portion of the semiconductor substrate ( ) adjacent the crack arrest structure ( ). A nitride layer ( ) is formed on the crack arrest structure ( ) and the dielectric material ( ). An oxide layer ( ) is formed on the nitride layer ( ). An opening ( ) is formed in the oxide layer ( ) and the nitride layer ( ) and lands on and exposes a portion of the dielectric material ( ). A crack arrest material such as, for example, copper, is formed in the opening ( ). A semiconductor device is formed in the semiconductor substrate ( ).