The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Aug. 30, 2002
Anand T. Krishnan, Richardson, TX (US);
Vijay Reddy, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
One aspect of the invention relates to a method of manufacturing a multi-gate integrated circuit device. According to the method, a protective coating substantially prevents processes used to form a second gate dielectric from affecting a first gate dielectric. In an exemplary process, an oxide gate dielectric is grown for peripheral region transistors, a protective coating of silicon nitride is deposited over the peripheral region gate oxide, the oxide and protective coating are etched from a core region, and then a second oxide dielectric is grown for core region transistors while the silicon nitride coating substantially prevents further oxide growth in the peripheral region. The protective coating can also prevent nitridation of the core region gate dielectric from affecting the peripheral region gate dielectric.