The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jul. 31, 2001
Fred Jenne, Los Gatos, CA (US);
Loren Thomas Lancaster, Colorado Springs, CO (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).