The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jul. 03, 2002
Applicant:
Inventors:
Toshiaki Fukunaga, Kaisei-machi, JP;
Toshiaki Kuniyasu, Kaisei-machi, JP;
Mitsugu Wada, Kaisei-machi, JP;
Yoshinori Hotta, Shizuoka-ken, JP;
Assignee:
Fuji Photo Film Co., Ltd., Kanagawa-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/504 ;
U.S. Cl.
CPC ...
C30B 2/504 ;
Abstract
In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.