The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Nov. 04, 2002
Hee Bok Kang, Daejon, KR;
Hynix Demiconductor Inc., Kyoungki-do, KR;
Abstract
A nonvolatile memory device and driving method comprises a plurality of cell array blocks, each cell array block including a plurality of sub-cell array blocks, each sub-cell array block including a plurality of unit cells, a plurality of main bitlines formed in the sub-cell array blocks in one direction, a plurality of sub-bitlines aligned in the sub-cell array blocks in a same direction of the main bitlines so as to be connected to terminals of the unit cells to induce voltages on the unit cells, respectively, a sense amplifier block having a plurality of sense amplifiers shared in common by a plurality of the cell array blocks to amplify a signal of each of the main bitlines, and at least one switching transistor formed at least at one of each cell array block, the transistor having a gate controlled by a corresponding one of the sub-bitline which receives a voltage value induced from the unit cell, a drain connected to a corresponding one of the main bitlines, and a source connected to a ground voltage terminal, the switching transistor capable of current-sensing a data value of the unit cell by varying a voltage transferred to the corresponding main bitline as a current amount varies according with the voltage induced on the corresponding one of the sub-bitlines.