The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Jan. 08, 2001
Applicant:
Inventors:
Takashi Terauchi, Hyogo, JP;
Masahiro Shimizu, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/343 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/343 ; H01L 2/352 ; H01L 2/940 ;
Abstract
Wires are formed on the main surface of a semiconductor substrate via a silicon oxide film. A nitride film is formed on the wires and the upper edge corner parts of the nitride film are rounded. Another nitride film, covering the nitride film, is formed and an interlayer oxide film is formed so as to cover this film. Contact holes are formed in the interlayer oxide film which reach the nitride film as well as the main surface of the semiconductor substrate and plug parts are formed within those contact holes.