The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Apr. 25, 2002
Vincent De Heyn, Braives, BE;
Guido Groeseneken, Leuven, BE;
Louis Vacaresse, Toulouse, FR;
Geert Gallopyn, Zottegem, BE;
Hugo Van Hove, Maarkedal, BE;
Other;
Abstract
Electrostatic discharge protection device comprising a first highly p-doped region with a base contact, a first highly n-doped region with a collector contact, a second highly n-doped region with an emitter contact and located between the first highly p-doped region and the second highly n-doped region, the first highly p-doped region and the second highly n-doped region being applied in a weakly p-doped region which a has a lateral overlap extending towards the first highly n-doped region, the lateral overlap having a width, the first highly n-doped region being applied in a weakly n-doped region, the weakly p-doped region and the weakly n-doped region being applied in a more weakly n-doped region, and a highly n-doped buried layer located underneath the more weakly n-doped region and extending below at least a portion of the weakly n-doped region and at least a portion of the weakly p-doped region. The device enables a lateral current component from the first highly n-doped region in the direction of the second highly n-doped region and a vertical current component from the first highly n-doped region via the buried layer in the direction of the second highly n-doped region. The width of the lateral overlap of the weakly p-doped region is determined in function of the predetermined ratio between the lateral current component and the vertical current component.