The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Aug. 28, 1997
Applicant:
Inventor:
Noriaki Kodama, Tokyo, JP;
Assignee:
NEC Electroincs Corporation, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and patterning of a first polysilicon layer. A second gate insulating layer for forming an ONO structure and a second polysilicon layer are then sequentially formed and patterned. After formation of a gate oxide layer, a third polysilicon layer is layered and patterned to form a gate electrode. The second and first polysilicon layers are then patterned to respectively form control gate and floating gate.