The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Aug. 17, 2001
Vincent Arnal, Grenoble, FR;
Joaquim Torres, Saint Martin le Vinoux, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A method for forming a capacitor with metal armatures in metallization levels above an integrated circuit, including the steps of: depositing over the surface of an integrated circuit an insulating layer having a thickness ranging between 0.5 and 1.5 &mgr;m; digging into the insulating layer to form trenches, of which at least a portion in top view is parallel and separate from one trench to the other; depositing and leveling a metallic material to form conductive lines in the trenches; locally removing the insulating layer to remove it at least from all the intervals separating two conductive lines; conformally depositing a dielectric; and depositing and etching a second metallic material to at least completely fill the intervals between lines.