The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
May. 29, 2001
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/02 ;
U.S. Cl.
CPC ...
H05H 1/02 ;
Abstract
In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=P ×P /S/d is controlled so as to be 50 or more, wherein P (W) is a supplied power, S (cm ) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and P (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.