The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
May. 13, 2003
Shuji Katoh, Hitachiota, JP;
Shigeta Ueda, Hitachi, JP;
Hiromitsu Sakai, Tokai, JP;
Takashi Ikimi, Hitachi, JP;
Tomomichi Ito, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.