The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2004

Filed:

Aug. 23, 2001
Applicant:
Inventor:

Yuji Yokoyama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7088 ;
U.S. Cl.
CPC ...
H01L 2/7088 ;
Abstract

The semiconductor device comprises an interconnection layer formed on a substrate a cap insulation film formed on the upper surface of the interconnection layer and a sidewall insulation film which is formed on the side walls of the interconnection layer and the cap insulation film and which includes a larger layer number of insulation films covering the side wall of the interconnection layer at the side wall of the cap insulation film than a layer number of insulation films at the side wall of the cap insulation film . Accordingly, the sidewall insulation film can be thickened at the side wall of the interconnection layer whereby a parasitic capacitance between the interconnection layer and the electrodes adjacent to the interconnection layer through the sidewall insulation film can be low.


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