The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Sep. 28, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7095 ;
U.S. Cl.
CPC ...
H01L 2/7095 ;
Abstract
A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the channel layer and the field plate, the distance between the Schottky contact and the drain and the length of the field plate falls within the range of 300 nanometers to 600 nanometers thick, the range from 800 nanometers to 3000 nanometers long and the range of the distance between the Schottky contact and the drain is plus or minus 400 nanometers, respectively, so that the distortion and the return-loss are improved without sacrifice of the withstanding voltage.