The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Dec. 30, 2002
Chae-Sung Kim, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention relates to a photodiode of an image sensor. Particularly, the photodiode is formed on a substrate so that an occupying area of a unit pixel of the image sensor is reduced. To achieve this effect, there is provided an image sensor comprising a photodiode receiving light, a floating diffusion area receiving photo-charges generated in the photodiode, a transfer transistor transferring the photo-charges from the photodiode to the floating diffusion area, a reset transistor controlling a voltage of the floating diffusion area, a drive transistor driven by the photodiode and supplying a source voltage and select transistor for addressing, the photodiode including: a first conductive layer formed on a semiconductor substrate and connected to an impurity area in the semiconductor substrate, wherein the semiconductor substrate has a first conductive type, the first conductive layer and the impurity area have a second conductive type; and a second conductive layer formed on the first conductive layer, wherein the second conductive layer has the first conductive type.