The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Oct. 02, 2002
Shinji Fukuda, Yamaguchi, JP;
Takafumi Kawano, Yamaguchi, JP;
Masataka Yamanaga, Yamaguchi, JP;
Sumio Terada, Yamaguchi, JP;
Koichi Fukuda, Yamaguchi, JP;
Other;
Abstract
The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO -zNd O (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO -zNd O )-tNd Ti O (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1, 0.1≦s≦0.8, 0.2≦t≦0.9, s+t=1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its absolute value of a temperature coefficient of resonant frequency &tgr; is small. Still another advantage of the composition is that its relative dielectric constant &egr; , its unloaded Q and its temperature coefficient of resonant frequency (&tgr; ) can be controlled in any desired manner by controlling the Nd Ti O content of the composition.