The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Apr. 18, 2003
Applicant:
Inventors:
Assignee:
Toppoly Optoelectronics Corp., Miao-Li County, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/144 ; H01L 2/182 ; H01L 2/1331 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/144 ; H01L 2/182 ; H01L 2/1331 ; H01L 2/1425 ;
Abstract
A method for fabricating a thin film transistor array and driving circuit comprising the steps of: providing a substrate; patterning a polysilicon layer and an N+ thin film over the substrate to form a plurality of islands; patterning the islands to form P+ doped regions; patterning out source/drain terminals and the lower electrode of a storage capacitor; etching back the N+ thin film; patterning out a gate and the upper electrode of the storage capacitor and patterning a passivation layer and a conductive layer to form pixel electrodes and a wiring layout.