The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Jun. 21, 2002
Yasuhiko Tsukikawa, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
This three-valued inverter includes first and second P-channel MOS transistors connected in series between a line of a first power supply potential and an output node, and each having a gate receiving a first signal; third and fourth P-channel MOS transistors connected in series between a line of a second power supply potential and the output node, and each having a gate receiving a second signal; and an N-channel MOS transistor connected between the output node and a line of a ground potential, and having a gate receiving a third signal. Back gates of the first and third P-channel MOS transistors are applied with the first power supply potential and the second power supply potential, respectively, and back gates of the second and fourth P-channel MOS transistors are both connected to the output node. Therefore, even in a power-up period or the like, no latch-up occurs.