The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Dec. 27, 2001
Loris Vendrame, Carbonera, IT;
Paolo Caprara, Milan, IT;
Giorgio Oddone, Rossiglione, IT;
Antonio Barcella, Trescore Balneario, IT;
STMicroelectronic S.r.l., Agrate Brianza, IT;
Abstract
A transistor includes a substrate region ( ) of a first type (P) of conductivity in a semiconductor material layer of the same type (P) of conductivity, at least a first contact region ( ) of the first type (P+) of conductivity inside the substrate region ( ) and adjacent to a first terminal (C) of the transistor, a well ( ) of second type (N) of conductivity placed inside the substrate region ( ), wherein the well ( ) of second type (N) of conductivity includes at least a second contact region ( ) of a second type of conductivity (N+) adjacent to a region of a second terminal (B) of the transistor, and a plurality of third contact regions ( ) of the first type of conductivity (P+) adjacent to a plurality of regions of a third terminal (E , . . . , E ) of the transistor interposed each one ( ) and other ( ) by proper insulating shapes ( ).