The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Oct. 29, 2001
Dolf Landheer, Ottawa, CA;
James Gupta, Ottawa, CA;
National Research Council of Canada, Ottawa, CA;
Abstract
The use of doped or undoped rare-earth silicates, according to the formula MSi O wherein M is a rare-earth element, in semiconductor technology is disclosed. In particular, gadolinium silicate as a gate dielectric of a metal-insulating-semiconductor device is disclosed. The insulator of the metal-insulating-semiconductor device is fabricated by exposing a suitably cleaned and terminated surface of a semiconductor substrate to a simultaneous or sequential flux of rare-earth atoms, silicon atoms and oxygen atoms, and annealing the resulting rare-earth containing layer. The use of higher dielectric constant material, such as provided by the invention, reduces the tunneling current through the device, since layers of greater thickness can be used.